The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2009

Filed:

Jun. 09, 2004
Applicants:

Hsu Kai (Karl) Yang, Pleasanton, CA (US);

Xizeng Shi, Fremont, CA (US);

Po-kang Wang, San Jose, CA (US);

Bruce Yee Yang, Pleasanton, CA (US);

Inventors:

Hsu Kai (Karl) Yang, Pleasanton, CA (US);

Xizeng Shi, Fremont, CA (US);

Po-Kang Wang, San Jose, CA (US);

Bruce Yee Yang, Pleasanton, CA (US);

Assignee:

Headway Technologies, Inc., Milpitas, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 13/16 (2006.01); G11C 11/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segments at substantially the same time as the portion of the magnetic cells are written.


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