The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Jun. 09, 2008
Masaki Aoki, Kawasaki, JP;
Masaki Aoki, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A magnetic memory device includes a memory cell including magnetoresistance effect elements MTJ, MTJand a select transistor connected to the connection node of the magnetoresistance effect elements MTJ, MTJ, a first signal line extended in a first direction and connected to the magnetoresistance effect element MTJ, a second signal line extended in the first direction and connected to the magnetoresistance effect element MTJ, and a third signal line extended in a second direction and crossing the first signal line in a region where the magnetoresistance effect element MTJis formed and crossing the second signal line in a region where the magnetoresistance effect element MTJis formed. When memory information is written into the memory cell, the memory information to be memorized is switched by directions of write currents to be flowed to the first and the second signal lines.