The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Oct. 21, 2005
Applicant:
Yaochung Chen, Rancho Palos Verdes, CA (US);
Inventor:
Yaochung Chen, Rancho Palos Verdes, CA (US);
Assignee:
Northrop Grumman Corporation, Los Angeles, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/16 (2006.01);
U.S. Cl.
CPC ...
Abstract
A relatively wide bandwidth low noise amplifier with an active input matching network. The active load maybe formed from a field effect transistor (FET) or high electron mobility transistor (HEMT) in a common gate configuration. The active load input matching network has a lower overall noise component to only transistor channel noise than reactive matching components, such as inductors and capacitors. By utilizing the active mode input matching network in accordance with the present invention, the circuit layout such amplifiers can be reduces significantly, for example, 23 mils×47 mils.