The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Nov. 09, 2007
Yoshihiro Morimoto, Hsinchu, TW;
Ryan Lee, Hualien, TW;
Hanson Liu, Kaohsiung, TW;
Fengyi Chen, Pingtung, TW;
Yoshihiro Morimoto, Hsinchu, TW;
Ryan Lee, Hualien, TW;
Hanson Liu, Kaohsiung, TW;
Fengyi Chen, Pingtung, TW;
TPO Displays Corp., Chu-Nan, Miao-Li County, TW;
Abstract
An image display system has a multi-gate thin film transistor (TFT) disposed on a transparent substrate. The multi-gate TFT includes a silicon film layer, a first electrode and a reflecting layer. The silicon film layer is formed on the transparent substrate and has a first crystallization zone and a second crystallization zone, which are not adjacent to each other. A grain size of the first crystallization zone is smaller than a grain size of the second crystallization zone. The first electrode corresponding to the first crystallization zone is disposed on the silicon film layer. The reflecting layer corresponding to the second crystallization zone is disposed on the transparent substrate. The silicon film layer is disposed on the transparent substrate and the reflecting layer.