The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Sep. 13, 2005
Hitoshi Takeda, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Hitoshi Takeda, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
An n-type Group III nitride semiconductor stacked layer structure including a first n-type layer which includes a layer containing n-type impurity atoms at a high concentration and a layer containing n-type impurity atoms at a low concentration, a second n-type layer containing n-type impurity atoms at an average concentration smaller than that of the first n-type layer, the second n-type layer neighboring the layer containing n-type impurity atoms at a low concentration in the first n-type layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile