The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Jul. 25, 2007
Kwang-woo Lee, Jeollabuk-do, KR;
Jae-hee OH, Gyeonggi-do, KR;
Chang-wook Jeong, Seoul, KR;
Abstract
An integrated circuit memory cell includes a substrate having a first semiconductor region of first conductivity type (e.g., N-type) therein, which may define a portion of a word line within the substrate. An electrically insulating layer is provided on the substrate. The electrically insulating layer has an opening therein that extends opposite a recess in the first semiconductor region. A first insulating spacer is provided on a sidewall of the recess in the first semiconductor region. A diode is provided in the opening. The diode has a first terminal electrically coupled to a bottom of the recess in the first semiconductor region. A variable resistivity material region (e.g., phase-changeable material region) is also provided. The variable resistivity material region is electrically coupled to a second terminal of the diode.