The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Mar. 31, 2006
Kazutaka Akiyama, Matsudo, JP;
Kazutaka Akiyama, Matsudo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An insulation film is formed on a semiconductor substrate. A stopper film, which has a large etching selectivity relative to the insulation film and has a first film thickness, is formed on the insulation film. A first mask material, which has a second film thickness that is less than the first film thickness, is formed on the stopper film. A first mask is formed by patterning the first mask material. An opening portion is formed by etching the stopper film using the first mask. The opening portion is filled with a second mask material. A second mask of the second mask material is formed by removing the stopper film. The insulation film is etched using the second mask.