The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2009

Filed:

Aug. 25, 2006
Applicants:

Tsunenori Suzuki, Kanagawa, JP;

Ryoji Nomura, Kanagawa, JP;

Mikio Yukawa, Kanagawa, JP;

Nobuharu Ohsawa, Kanagawa, JP;

Tamae Takano, Kanagawa, JP;

Yoshinobu Asami, Kanagawa, JP;

Takehisa Sato, Kanagawa, JP;

Inventors:

Tsunenori Suzuki, Kanagawa, JP;

Ryoji Nomura, Kanagawa, JP;

Mikio Yukawa, Kanagawa, JP;

Nobuharu Ohsawa, Kanagawa, JP;

Tamae Takano, Kanagawa, JP;

Yoshinobu Asami, Kanagawa, JP;

Takehisa Sato, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

It is an object of the present invention to manufacture, with high yield, semiconductor devices in each of which an element which has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-forming layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound over the separation layer, and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and after attaching a first flexible substrate over the second conductive layer, separating the separation layer and the element-forming layer at the separation layer.


Find Patent Forward Citations

Loading…