The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Jan. 12, 2006
Tamito Suzuki, Fukuroi, JP;
Tamito Suzuki, Fukuroi, JP;
Yamaha Corporation, Shizuoka-Ken, JP;
Abstract
Gate insulating filmsA andB of different thickness are formed in element openingsandin the isolation filmof a wafer. The gate insulating filmB is the thinnest gate insulating film. A dummy insulating film having the same thickness as the thinnest gate insulating filmB is formed in wafer periphery area WP. Gate electrodesA andB are formed on the gate insulating filmsA andB, and thereafter an insulating film is deposited on the wafer surface. The deposited insulating film is dry-etched to form side wall spacerstoon side walls of the gate electrodesA andB. During dry etching, the time when the semiconductor surfaces are exposed in the element openingand area WP is detected as an etching end point by a change in the emission spectrum intensity of etching byproducts.