The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Oct. 12, 2005
Applicant:
Kaiping Liu, Plano, TX (US);
Inventor:
Kaiping Liu, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process () for making integrated circuits with a gate, uses a doped precursor (N and/orP) on barrier material () on gate dielectric (). The process () involves totally consuming () the doped precursor (N and/orP) thereby driving dopants (N and/orP) from the doped precursor () into the barrier material (). An integrated circuit has a gate dielectric (), a doped metallic barrier material (N and/orP) on the gate dielectric (), and metal silicide () on the metallic barrier material (). Other integrated circuits, transistors, systems and processes of manufacture are disclosed.