The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Jun. 01, 2005
Jyn-bang Shyu, Cupertino, CA (US);
Jyn-Bang Shyu, Cupertino, CA (US);
Intelleflex Corporation, San Jose, CA (US);
Abstract
Systems with semiconductor devices that are DC-biased at either their weak inversion (i.e., sub-threshold) region or their strong inversion region. In a preferred embodiment using semiconductor devices (e.g., NMOS, PMOS, etc.), a gate to source voltage (Vgs) is slightly below the threshold voltage (Vtn) of the device. These weakly turned-on semiconductor devices increase the receiving AC sensitivity of an AM-Detector compared to that of a conventional AM-Detector without any DC-biasing. Further, the compensating bias voltage (Vbias) compensates for one or both of the ambient temperature change and the foundry's process variation of the various semiconductor devices.