The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Jul. 09, 2004
Hiroaki Matsumura, Anan, JP;
Masanao Ochiai, Anan, JP;
Hiroaki Matsumura, Anan, JP;
Masanao Ochiai, Anan, JP;
Nichia Corporation, Anan-shi, JP;
Abstract
A nitride semiconductor laser device comprises a nitride semiconductor substrate (); a nitride semiconductor lamination structure that has an n-type semiconductor layer (), an active layer () and a p-type semiconductor layer () laminated on or above the nitride semiconductor substrate (), and has a stripe-shaped waveguide region for laser light; and end surface protective films () on the both end surfaces substantially perpendicular to the waveguide region. In the nitride semiconductor laser device, the nitride semiconductor substrate () has a luminescent radiation region () that absorbs light emitted from the active layer () and emits luminescent radiation with a wavelength longer than the wavelength of the emitted light, and the end surface protective films () have a high reflectivity for the wavelength of the luminescent radiation from the luminescent radiation region (). Accordingly, a nitride semiconductor laser device that does not improperly operate and has excellent FFP is provided.