The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Dec. 08, 2006
Michael Lee, High Wycombe, GB;
Steven Wright, Northchurch, GB;
Philip Judge, Richmond, GB;
Craig Wilson, Livermore, CA (US);
Gregory Cestra, Pleasanton, CA (US);
Derek Bowers, Los Altos Hills, CA (US);
Michael Lee, High Wycombe, GB;
Steven Wright, Northchurch, GB;
Philip Judge, Richmond, GB;
Craig Wilson, Livermore, CA (US);
Gregory Cestra, Pleasanton, CA (US);
Derek Bowers, Los Altos Hills, CA (US);
Analog Devices, Inc., Norwood, MA (US);
Abstract
A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ρ of at least 0.02 Ω-cm (typically 0.02-1.0 Ω-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 kΩ/□ may also be obtained. The resulting thin film is preferably at least 200thick, to reduce surface scattering conduction currents.