The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
May. 17, 2007
Toshiyuki Nakaie, Wakayama, JP;
Masanori Sawada, Wakayama, JP;
Taizo Shintani, Wakayama, JP;
Natarajan Mahadeva Iyer, Heverlee, BE;
David Eric Tremouilles, Heverlee, BE;
Toshiyuki Nakaie, Wakayama, JP;
Masanori Sawada, Wakayama, JP;
Taizo Shintani, Wakayama, JP;
Natarajan Mahadeva Iyer, Heverlee, BE;
David Eric Tremouilles, Heverlee, BE;
Hanwa Electronic Ind. Co., Ltd., Wakayama, JP;
Abstract
A method of quickly measuring a characteristic impedance of an ESD protecting circuit by applying a discharge voltage to the ESD protecting circuit, includes the steps of measuring a variation in discharge voltage applied to and a variation in discharge current caused to flow through the ESD protecting circuit with time; simultaneously detecting a state when both the discharge voltage and discharge current corresponding to each other are attenuated, after both the discharge voltage and discharge current sequentially rise to arrive individually to respective peak values based on an input to or an output from a computer; and taking a ratio of the variation of discharge voltage to the variation of discharge current during the attenuation as an impedance value when the ratio is nearly constant as well as an apparatus for realizing the same.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile