The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
May. 16, 2007
Ryoichi Kajiwara, Hitachi, JP;
Kazuhiro Suzuki, Mito, JP;
Toshiaki Ishii, Hitachi, JP;
Kazutoshi Itou, Hitachi, JP;
Ryoichi Kajiwara, Hitachi, JP;
Kazuhiro Suzuki, Mito, JP;
Toshiaki Ishii, Hitachi, JP;
Kazutoshi Itou, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A power semiconductor module and an inverter apparatus in which a device or a joining part is not mechanically damaged even when the temperature in use becomes a high temperature in the range of 175 to 250° C., resulting in excellent reliability at high temperature retaining test and thermal cycling test. Low thermal expansion ceramic substrates are disposed above and below the device. A material having a coefficient of thermal expansion of 10 ppm/K or less is disposed between the ceramic substrates. In addition, an inorganic material having a coefficient of thermal expansion in the range of 2 to 6 ppm/K or less is disposed around the device.