The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Jul. 12, 2007
Hyun Cheol Koo, Seoul, KR;
Jong Hwa Eom, Seoul, KR;
Suk Hee Han, Seoul, KR;
Joon Yeon Chang, Seoul, KR;
Hyung Jun Kim, Daegu, KR;
Hyun Cheol Koo, Seoul, KR;
Jong Hwa Eom, Seoul, KR;
Suk Hee Han, Seoul, KR;
Joon Yeon Chang, Seoul, KR;
Hyung Jun Kim, Daegu, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
Disclosed herein is a spin transistor including: a semiconductor substrate having a channel layer formed therein; first and second electrodes which are formed to be spaced apart from each other on the substrate at a predetermined distance along a longitudinal direction of the channel layer; a source and drain which include magnetized ferromagnetic materials and are formed to be spaced apart form each other between the first electrode and the second electrode at a predetermined distance along the longitudinal direction of the channel layer; and a gate which is formed on the substrate between the source and the drain, and adjusts spin orientations of electrons passing through the channel layer, wherein the electrons passing through the channel layer are spin-aligned at a lower side of the source by a stray magnetic field of the source and spin-filtered at a lower side of the drain by a stray field of the drain.