The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Sep. 01, 2006
Masato Hiramatsu, Tokyo, JP;
Masakiyo Matsumura, Kanagawa, JP;
Mikihiko Nishitani, Nara, JP;
Yoshinobu Kimura, Tokyo, JP;
Yoshitaka Yamamoto, Nara, JP;
Masato Hiramatsu, Tokyo, JP;
Masakiyo Matsumura, Kanagawa, JP;
Mikihiko Nishitani, Nara, JP;
Yoshinobu Kimura, Tokyo, JP;
Yoshitaka Yamamoto, Nara, JP;
Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center, Kanagawa, JP;
Abstract
A thin film transistor includes a one conductive type semiconductor layer (); a source region () and a drain region () which are separately provided in the semiconductor layer; and a gate electrode () provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width (W) of the junction face between the source region and the channel () which is provided between the source region and drain region, is different from the width (W) of the junction face between the above channel region and the drain region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile