The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7608878 B1

Expired

Date of Patent:

Oct. 27, 2009

Filed:

Dec. 29, 2006

Semiconductor device manufactured with a double shallow trench isolation process

Applicant:

Seung Joo Baek, Seoul, KR;

Inventor:

Seung Joo Baek, Seoul, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:

Townsend and Townsend and Crew LLP

Primary Examiner:

Thanh V Pham

Int. Cl.

CPC ...

H01L 29/739 (2006.01);

U.S. Cl.

CPC ...

Abstract

A method for manufacturing a semiconductor device includes forming a device isolation film by a double Shallow Trench Isolation (STI) process, forming a first active region having a negative slope and a second active region having a positive slope. Additionally, the method includes applying a recess region and a bulb-type recess region to the above-extended active region so as to prevent generation of horns in the active regions. This structure results in improvement in effective channel length and area.

Find Patent Forward Citations

Baek, Seung. (2009). Semiconductor device manufactured with a double shallow trench isolation process (U.S. Patent No. 7608878). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7608878

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile