The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7608867 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 27, 2009

Filed:

Mar. 30, 2006
Applicants:

Clément Charbuillet, Chambery, FR;

Thomas Skotnicki, Crolles-Monfort, FR;

Alexandre Villaret, Grenoble, FR;

Inventors:

Clément Charbuillet, Chambery, FR;

Thomas Skotnicki, Crolles-Monfort, FR;

Alexandre Villaret, Grenoble, FR;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/868 (2006.01);
U.S. Cl.
CPC ...
Abstract

A vertical IMOS-type transistor including: a stack of a first semiconductor portion doped with dopant elements of a first type, of a second substantially undoped intrinsic semiconductor portion, and of a third semiconductor portion doped with dopant elements of a second type forming a PIN-type diode; and a conductive gate placed against the stack with an interposed insulating layer.


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