The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Jan. 24, 2005
Shinichi Hoshi, Tokyo, JP;
Tomoyuki Ohshima, Tokyo, JP;
Hironobu Moriguchi, Tokyo, JP;
Oki Semiconductor Co., Ltd., Tokyo, JP;
Abstract
The semiconductor device () comprises a semiinsulating substrate (), a layered structure () of compound semiconductor which is a mesa structure () and contains an active channel layer (), a first and a second metal main electrodes () which are provided on the layered structure (), a first and a second ion implantation regions () which are provided at the depth level below the active channel layer, and a metal control electrode () which is provided along the channel width direction from the first ion implantation region to the second ion implantation region, crossing over the upper side of the active channel layer.