IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7608853 B1

PDFFull Text
Date of Patent:
Oct. 27, 2009

Filed:

Jun. 27, 2008

Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same

Applicants:

Chul Huh, Daejeon, KR;

Rae-man Park, Daejeon, KR;

Jae-heon Shin, Daejeon, KR;

Kyung-hyun Kim, Daejeon, KR;

Tae-youb Kim, Seoul, KR;

Kwan-sik Cho, Daejeon, KR;

Gun-yong Sung, Daejeon, KR;

Inventors:

Chul Huh, Daejeon, KR;

Rae-Man Park, Daejeon, KR;

Jae-Heon Shin, Daejeon, KR;

Kyung-Hyun Kim, Daejeon, KR;

Tae-Youb Kim, Seoul, KR;

Kwan-Sik Cho, Daejeon, KR;

Gun-Yong Sung, Daejeon, KR;

Assignee:

Electronics and Telecommunications Research Institute, Daejeon, KR;

Attorney:

Rabin & Berdo, PC

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01); H01L 29/22 (2006.01); H01L 33/00 (2006.01); H01L 21/00 (2006.01); H01L 21/26 (2006.01); H01L 21/324 (2006.01); H01L 21/42 (2006.01); H01L 21/477 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that includes a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.

Find Patent Forward Citations

Loading…