The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Mar. 14, 2007
Karla Romero, Dresden, DE;
Sven Beyer, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Rolf Stephan, Dresden, DE;
Karla Romero, Dresden, DE;
Sven Beyer, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Rolf Stephan, Dresden, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a first transistor element and a second transistor element. Each of the first transistor element and the second transistor element comprises a gate electrode. A stressed material layer is deposited over the first transistor element and the second transistor element. The stressed material layer is processed to form from the stressed material layer sidewall spacers adjacent the gate electrode of the second transistor element and a hard mask covering the first transistor element. A pair of cavities is formed adjacent the gate electrode of the second transistor element. A pair of stress-creating elements is formed in the cavities and the hard mask is at least partially removed.