The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Sep. 08, 2006
Ivan Milosavljevic, Thousand Oaks, CA (US);
Adele Schmitz, Thousand Oaks, CA (US);
Michael Antcliffe, Los Angeles, CA (US);
Ming HU, Cerritos, CA (US);
Lorna Hodgson, Cornelius, NC (US);
Ivan Milosavljevic, Thousand Oaks, CA (US);
Adele Schmitz, Thousand Oaks, CA (US);
Michael Antcliffe, Los Angeles, CA (US);
Ming Hu, Cerritos, CA (US);
Lorna Hodgson, Cornelius, NC (US);
Other;
Abstract
A method for fabricating a tiered structure includes forming a gate on a semiconductor substrate. Formation of the gate includes depositing a gate foot using a gate foot mask having an opening through it to define the gate foot over the substrate. After forming the gate foot, the gate foot mask is stripped and a passivation layer is formed over the gate foot and the substrate. A gate head mask is formed over the gate foot with the gate head mask exposing a portion of the passivation layer on a top portion of the gate foot. The portion of the passivation layer on the top portion of the gate foot is removed to expose the top portion of the gate foot. A gate head is formed on the top portion of the gate foot using the gate head mask. A lift-off process is performed, removing the gate head mask.