The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Nov. 09, 2006
Dae Kon OH, Daejeon, KR;
Jin Hong Lee, Daejeon, KR;
Jin Soo Kim, Daejeon, KR;
Sung Ui Hong, Daejeon, KR;
Ho Sang Kwack, Chungcheongnam-do, KR;
Dae Kon Oh, Daejeon, KR;
Jin Hong Lee, Daejeon, KR;
Jin Soo Kim, Daejeon, KR;
Sung Ui Hong, Daejeon, KR;
Ho Sang Kwack, Chungcheongnam-do, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge waveguide; an ohmic contact layer formed on the second clad layer; and a plurality of gratings formed in at least one of the first and second clad layers, making a predetermined angle with the first ridge waveguide or the second ridge waveguide, and periodically arranged in a longitudinal direction of the first or second ridge waveguide. As a result, a general hologram lithography process capable of mass production is applied to the present invention so that process time can be reduced. Also, a distributed feedback semiconductor laser structure using a quantum-dot active layer that does not require an additional process for obtaining a pure single-wavelength is provided.