The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2009

Filed:

Nov. 30, 2007
Applicants:

Kazuya Yamamoto, Tokyo, JP;

Satoshi Suzuki, Tokyo, JP;

Tomoyuki Asada, Tokyo, JP;

Takayuki Matsuzuka, Tokyo, JP;

Teruyuki Shimura, Tokyo, JP;

Inventors:

Kazuya Yamamoto, Tokyo, JP;

Satoshi Suzuki, Tokyo, JP;

Tomoyuki Asada, Tokyo, JP;

Takayuki Matsuzuka, Tokyo, JP;

Teruyuki Shimura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A power amplifier according to the present invention is operated by switching a main power amplifier and a subsidiary power amplifier. The idle current of the subsidiary power amplifier is smaller than the idle current of the main power amplifier. Each of the main power amplifier and the subsidiary power amplifier has a former amplification element for amplifying RF signals, a latter amplification element for amplifying output signals from the former amplification element, a former bias circuit for driving the former amplification elements, and a latter bias circuit for driving the latter amplification elements, respectively. The interval between the latter amplification element of the main power amplifier and the latter amplification element of the subsidiary power amplifier is not more than 100 μm. The interval between the latter amplification element of the main power amplifier and the latter bias circuit of the subsidiary power amplifier is not less than 200 μm.


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