The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2009

Filed:

Apr. 02, 2007
Applicants:

Kazushi Nakazawa, Osaka, JP;

Hiroaki Ueno, Osaka, JP;

Manabu Yanagihara, Osaka, JP;

Yasuhiro Uemoto, Shiga, JP;

Tsuyoshi Tanaka, Osaka, JP;

Inventors:

Kazushi Nakazawa, Osaka, JP;

Hiroaki Ueno, Osaka, JP;

Manabu Yanagihara, Osaka, JP;

Yasuhiro Uemoto, Shiga, JP;

Tsuyoshi Tanaka, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/095 (2006.01); H01L 21/28 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes: a semiconductor layer made of a group-III nitride semiconductor and having a first surface and a second surface opposed to the first surface; a Schottky electrode formed on the first surface of the semiconductor layer; and an ohmic electrode electrically connected to the second surface of the semiconductor layer. The semiconductor layer has, in at least the upper portion thereof, highly-resistive regions selectively formed to have a high resistance.


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