The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7605440 B1

Date of Patent:

Oct. 20, 2009

Filed:

Apr. 07, 2006

Pixel cell isolation of charge storage and floating diffusion regions using doped wells

Applicant:

Parker Altice, Meridian, ID (US);

Inventor:

Parker Altice, Meridian, ID (US);

Assignee:

Aptina Imaging Corporation, Grand Cayman, KY;

Attorney:

Dickstein Shapiro LLP

Primary Examiner:

Ida M Soward

Int. Cl.

CPC ...

H01L 31/06 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 29/417 (2006.01); H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 27/15 (2006.01); H01L 29/16 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2006.01); H01L 29/161 (2006.01); H01L 31/153 (2006.01); H01L 29/26 (2006.01);

U.S. Cl.

CPC ...

Abstract

A pixel having a well-isolated charge storage region or floating diffusion region may be obtained by providing a separate P-well around the storage region or floating diffusion region. In one embodiment, a separate P-well entirely encases the storage region and is in contact with the storage region. This P-well provides an electrical barrier for preventing electrons that are generated elsewhere in the pixel from contaminating the storage region. In another embodiment, a first separate P-well encases and is in contact with the storage region and a second separate P-well encases and is in contact with the floating diffusion region.

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