The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Aug. 24, 2007
Shunpei Yamazaki, Tokyo, JP;
Taketomi Asami, Kanagawa, JP;
Hidehito Kitakado, Hyogo, JP;
Yasuyuki Arai, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Taketomi Asami, Kanagawa, JP;
Hidehito Kitakado, Hyogo, JP;
Yasuyuki Arai, Kanagawa, JP;
Abstract
A hydrogenation method that utilizes plasma directly exposes a crystalline semiconductor film to the plasma, and therefore involves the problem that the crystalline semiconductor film is damaged by the ions generated simultaneously in the plasma. If a substrate is heated to 400° C. or above to recover this damage, hydrogen is re-emitted from the crystalline semiconductor film. To solve these problems, a method of fabricating a semiconductor device according to the present invention comprises the steps of forming a hydrogen-containing first insulating film on a semiconductor layer formed into a 'predetermined shape, conducting heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation, forming a second insulating film in contact with the first insulating film, conducting heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation, forming a hydrogen-containing third insulating film on the second insulating film and conducting heat-treatment in an atmosphere containing hydrogen or nitrogen.