The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Nov. 02, 2005
Hong-sick Park, Suwon-si, KR;
Sung-ho Kang, Cheonan-si, KR;
Hong-je Cho, Cheonan-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
The present invention provides a method for manufacturing a thin film transistor (TFT) array panel by forming a gate line having a gate electrode on an insulating substrate; sequentially depositing a gate insulating layer and a semiconductor layer on the gate line; forming a drain electrode and a data line having a source electrode on the gate insulating and semiconductor layers; and forming a pixel electrode connected to the drain electrode. These elements can be formed by photo-etching using an etchant containing 65 wt % to 75 wt % of phosphoric acid, 0.5 wt % to 15 wt % of nitric acid, 2 wt % to 15 wt % of acetic acid, 0.1 wt % to 8.0 wt % of a potassium compound, and deionized water. Each element of the TFT array panel can be patterned with the etchant of the invention under similar conditions, which simplifies a manufacturing process and saves costs and results in TFT elements having a good profile.