The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Feb. 23, 2006
Tae-woo Jung, Kyoungki-do, KR;
Young-hun Bae, Kyoungki-do, KR;
Tae-Woo Jung, Kyoungki-do, KR;
Young-Hun Bae, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-Do, KR;
Abstract
A method for fabricating a semiconductor device with a gate is provided. The method includes: forming a gate insulation layer over a substrate; sequentially forming a polysilicon layer, a silicide layer and a hard mask layer over the gate insulation layer; selectively patterning the hard mask layer; etching the silicide layer using the patterned hard mask layer as a mask such that the silicide layer has a cross-sectional etch profile that is negatively sloped; etching the polysilicon layer using the patterned hard mask layer as a mask to form a gate; and performing a light oxidation process to oxidize exposed sidewalls of the polysilicon layer and the silicide layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile