The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Jan. 31, 2006
Chel Jong Choi, Daejeon, KR;
Yong Jin Kim, Daejeon, KR;
HI Deok Lee, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a semiconductor device and a manufacturing method thereof. The method includes the steps of: forming a thin film transistor including a substrate having a semiconductor layer and silicon, a gate insulation layer formed on the semiconductor layer, a gate electrode formed on the gate insulation layer, and source and drain regions formed in the semiconductor layer; forming a first metal layer on the substrate having the semiconductor layer and the gate electrode; forming a second metal layer on the first metal layer; forming a third metal layer on the second metal layer; forming a nitride layer on the third metal layer; and annealing the substrate having the nitride layer, and forming a silicide layer on the gate electrode and the source and drain regions.