The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Sep. 21, 2007
Ki-yeon Park, Seoul, KR;
Sun-jung Kim, Suwon-si, KR;
Min-kyung Ryu, Seoul, KR;
Seung-hwan Lee, Suwon-si, KR;
Han-mei Choi, Seoul, KR;
Ki-Yeon Park, Seoul, KR;
Sun-Jung Kim, Suwon-si, KR;
Min-Kyung Ryu, Seoul, KR;
Seung-Hwan Lee, Suwon-si, KR;
Han-Mei Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A method of manufacturing a non-volatile memory device includes forming a tunnel insulating layer on a substrate, forming a conductive pattern on the tunnel insulating layer, forming a lower dielectric layer on the conductive pattern, performing a first heat treatment process to density the lower dielectric layer, and forming a middle dielectric layer having an energy band gap smaller than that of the lower dielectric layer on the first heat-treated lower dielectric layer. The method further includes forming an upper dielectric layer including a material substantially identical to that of the lower dielectric layer on the middle dielectric layer, performing a second heat treatment process to densify the middle dielectric layer and the upper dielectric layer and forming a conductive layer on the second heat-treated upper dielectric layer.