The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Mar. 03, 2006
Christoph Bromberger, Heilbronn, DE;
Christoph Bromberger, Heilbronn, DE;
Atmel Automotive GmbH, Heilbronn, DE;
Abstract
A method for the integration of two bipolar transistors in a semiconductor body, wherein, for the first bipolar transistor, a first emitter semiconductor region, a first base semiconductor region, and a first collector semiconductor region are produced. A recombination layer is applied to the first bipolar transistor, which is adjacent to the first emitter semiconductor region or the first collector semiconductor region and is constructed in such a way that charge carriers recombine on the recombination layer, and next, the second bipolar transistor is placed on the recombination layer, wherein a second emitter semiconductor region, a second base semiconductor region, and a second collector semiconductor region are produced on the recombination layer, so that the second emitter semiconductor region or the second collector semiconductor region is adjacent to the recombination layer.