The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Sep. 07, 2007
Applicant:
Jin-ha Park, Gyeonggi-do, KR;
Inventor:
Jin-Ha Park, Gyeonggi-do, KR;
Assignee:
Dongbu HiTek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device including at least one step of: forming a transistor on and/or over a semiconductor substrate; forming silicide on and/or overa gate electrode and a source/drain region of the transistor; removing an uppermost oxide film from a spacer of the transistor; and forming a contact stop layer on and/or over the entire surface of the substrate including the gate electrode.