The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Sep. 28, 2006
Richard Johannes Luyken, Munich, DE;
Hans-peter Moll, Dresden, DE;
Martin Popp, Dresden, DE;
Till Schloesser, Dresden, DE;
Marc Strasser, Munich, DE;
Rolf Weis, Dresden, DE;
Richard Johannes Luyken, Munich, DE;
Hans-Peter Moll, Dresden, DE;
Martin Popp, Dresden, DE;
Till Schloesser, Dresden, DE;
Marc Strasser, Munich, DE;
Rolf Weis, Dresden, DE;
Qimonda AG, Munich, DE;
Abstract
In a method for producing a trench transistor, a substrate of a first conduction type is provided and a trench in the substrate and a gate dielectric in the trench are formed. A first conductive filling in the trench as a gate electrode on the gate dielectric and first source and drain regions are formed. An etched-back first conductive filling is produced by etching back the first conductive filling down to a depth below the first source and drain regions and second source and drain regions are formed. The second source and drain regions adjoin the first source and drain regions and extend to a depth at least as far as the etched-back first conductive filling. An insulation spacer above the etched-back first conductive filling is formed in the trench and a second conductive filling is provided in the trench as an upper part of the gate electrode.