The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Apr. 25, 2006
Osamu Nakamura, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Koji Dairiki, Atsugi, JP;
Masayuki Kajiwara, Atsugi, JP;
Junichi Koezuka, Atsugi, JP;
Satoshi Murakami, Atsugi, JP;
Osamu Nakamura, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Koji Dairiki, Atsugi, JP;
Masayuki Kajiwara, Atsugi, JP;
Junichi Koezuka, Atsugi, JP;
Satoshi Murakami, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H, O, O, and P are added, are formed in a semiconductor film having a crystalline structure, using a mask, and gettering for segregating a metal element contained in the semiconductor film to the impurity region by heat treatment. Thereafter, pattering is conducted using the mask, whereby a semiconductor layer made of the semiconductor film having a crystalline structure is formed.