The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Apr. 24, 2006
Philippe Meunier-beillard, Kortenberg, BE;
Erwin Hijzen, Blanden, BE;
Johannes J. T. M. Donkers, Valkenswaard, NL;
Francois Neuilly, Colomby-sur-Thaon, FR;
Philippe Meunier-Beillard, Kortenberg, BE;
Erwin Hijzen, Blanden, BE;
Johannes J. T. M. Donkers, Valkenswaard, NL;
Francois Neuilly, Colomby-sur-Thaon, FR;
NXP B.V., Eindhoven, NL;
Abstract
A method of fabricating a bipolar transistor in a first trench () is disclosed wherein only one photolithographic mask is applied which forms a first trench () and a second trench (). A collector region () is formed self-aligned in the first trench () and the second trench (). A base region () is formed self-aligned on a portion of the collector region (), which is in the first trench (). An emitter region () is formed self-aligned on a portion of the base region (). A contact to the collector region () is formed in the second trench () and a contact to the base region () is formed in the first trench (). The fabrication of the bipolar transistor may be integrated in a standard CMOS process.