The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Jan. 09, 2007
Yong-won Cha, Gyeonggi-do, KR;
Dong-chul Suh, Suwon, KR;
Dae-lok Bae, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Abstract
A method of fabricating a three-dimensional semiconductor device is provided along with a three-dimensional semiconductor device fabricated thereby. The method includes forming a heat conductive plug to channel heat away from devices on a substrate, while high temperature processes are performed on a stacked semiconductor layer. The ability to use high temperature processes on the stacked semiconductor layer without adversely effecting devices on the substrate allows the formation of a high quality single-crystalline stacked semiconductor layer. The high quality single-crystalline semiconductor layer can then be used to fabricate improved thin film transistors.