The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Mar. 11, 2005
Applicants:
Shingo Sakakibara, Hamamatsu, JP;
Yoku Inoue, Hamamatsu, JP;
Hidenori Mimura, Hamamatsu, JP;
Inventors:
Assignee:
Yamaha Corporation, Shizuoka-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate, and a step B of depositing or vapor depositing at least one atom layer of gallium.
Sakakibara, Shingo. (2009). Heteroepitaxial growth method for gallium nitride (U.S. Patent No. 7604697). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7604697
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile