The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2009

Filed:

Jun. 15, 2006
Applicants:

Rong Xuan, Hsinchu Hsien, TW;

Yao-lin Huang, Hsinchu, TW;

Yu-chen Yu, Hsinchu, TW;

Yen Chu, Hsinchu, TW;

Inventors:

Rong Xuan, Hsinchu Hsien, TW;

Yao-Lin Huang, Hsinchu, TW;

Yu-Chen Yu, Hsinchu, TW;

Yen Chu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/098 (2006.01); H01S 5/00 (2006.01); H01S 3/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor laser device includes a substrate having a first surface and a second surface opposite to the first surface, an active region formed on the second surface of the substrate, a cladding layer formed on the active region, and an insulation region formed in the cladding layer to form on the second surface of the substrate a first laser region having a first size and a second laser region having a second size different from the first size. The first laser region is used for generating a first optical spectrum having a first laser mode channel space. The second laser region is used for generating a second optical spectrum having a second laser mode channel space. A combination of the first optical spectrum and the second optical spectrum forms a single mode laser. Without any gratings, the semiconductor laser device is easy to be fabricated and has a low fabrication cost.


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