The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Jul. 20, 2007
Takehiro Nishida, Tokyo, JP;
Motoharu Miyashita, Tokyo, JP;
Tsutomu Yamaguchi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.