The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7602650 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 13, 2009

Filed:

Aug. 30, 2007
Applicants:

Kee-ho Jung, Suwon-si, KR;

Jae-yong Jeong, Yongin-si, KR;

Chi-weon Yoon, Seocho-gu, KR;

Inventors:

Kee-Ho Jung, Suwon-si, KR;

Jae-Yong Jeong, Yongin-si, KR;

Chi-Weon Yoon, Seocho-gu, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one aspect, a program method is provided for a flash memory device including a plurality of memory cells each being programmed in one of a plurality of data states. The program method of this aspect includes programming selected memory cells in a first data state, verifying a result of the programming, successively programming selected memory cells in at least two or more data states corresponding to threshold voltages which are lower than a threshold voltage corresponding to the first data state, and verifying results of the successive programming.


Find Patent Forward Citations

Jung, Kee-Ho. (2009). Flash memory device and method for programming multi-level cells in the same (U.S. Patent No. 7602650). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7602650

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