The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2009

Filed:

Aug. 29, 2007
Applicants:

Yoshihisa Kagawa, Kanagawa, JP;

Tsutomu Shimayama, Kanagawa, JP;

Takatoshi Kameshima, Kanagawa, JP;

Inventors:

Yoshihisa Kagawa, Kanagawa, JP;

Tsutomu Shimayama, Kanagawa, JP;

Takatoshi Kameshima, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a semiconductor device including: an insulating film configured to be provided on a substrate and be porosified through decomposition and removal of a pore-forming material; a covering insulating film configured to be provided on the insulating film; and conductive layer patterns configured to be provided in the covering insulating film and the insulating film and reach the substrate, wherein the insulating film includes a non-porous region in which the pore-forming material remains.


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