The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Jul. 31, 2006
Eun-cheol Lee, Gyeonggi-do, KR;
Won-suk Yang, Gyeonggi-do, KR;
Jin-woo Lee, Gyeonggi-do, KR;
Tae-young Chung, Gyeonggi-do, KR;
Eun-Cheol Lee, Gyeonggi-do, KR;
Won-Suk Yang, Gyeonggi-do, KR;
Jin-Woo Lee, Gyeonggi-do, KR;
Tae-Young Chung, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A coupling capacitor and a semiconductor memory device using the same are provided. In an embodiment, each memory cell of the semiconductor memory device includes a coupling capacitor so that a storage capacitor can store at least 2 bits of data. The coupling capacitor has a capacitance having a predetermined ratio with respect to the capacitance of the storage capacitor. For this, the coupling capacitor is formed by substantially the same fabrication process as the storage capacitor. The predetermined ratio is obtained by choosing an appropriate number of individual capacitors, each with the same capacitance of the storage capacitor, to comprise the coupling capacitor. Also, the coupling capacitor is disposed on an interlayer insulating layer that buries a bit line in a cell region and a sense amplifier in a sense amplifier region.