The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Dec. 27, 2006
Applicant:
Jun Zhu, Shanghai, CN;
Inventor:
Jun Zhu, Shanghai, CN;
Assignees:
Shanghai IC R&D Center, Shanghai, CN;
Shanghai Huahong (Group) Co., Ltd, Shanghai, CN;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a damascene structure and an air gap embedded in the damascene dielectric layer. A method of manufacturing a semiconductor device includes depositing a metal barrier in advance as an etch stop, forming a copper damascene interconnect structure, forming an air gap, and depositing a photosensitive passivation material on the air gap.