The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
May. 24, 2005
Young Suk Kim, Kawasaki, JP;
Young Suk Kim, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
Disclosed is a method of fabricating a semiconductor device that includes field effect transistors each having a gate electrode formed only of a metal silicide which overcomes the problem of depletion of the gate and makes adjustment of a work function easier, and that has a high integration with the existing process and a high cost performance. The method fabricates a semiconductor substrate, a gate electrode formed on the semiconductor substrate via a gate insulating layer, and a source and a drain having an elevated structure with the gate electrode in between, and includes a step at which the gate electrode is silicidized to form a metal silicide.