The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2009

Filed:

Jun. 26, 2006
Applicants:

Shinji Horii, Fukuyama, JP;

Takashi Yokoyama, Fukuyama, JP;

Tetsuya Ohnishi, Fukuyama, JP;

Inventors:

Shinji Horii, Fukuyama, JP;

Takashi Yokoyama, Fukuyama, JP;

Tetsuya Ohnishi, Fukuyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory cell in a semiconductor memory device comprises a variable resistor element configured so that a variable resistor body is sandwiched between a first electrode and a second electrode, and a transistor element capable of controlling a flow of current in the variable resistor element, wherein the transistor element and the variable resistor element are placed one over the other along a direction in which the first electrode, the variable resistor body, and the second electrode of the variable resistor element are layered, and one of the first electrode and the second electrode of the variable resistor element is connected to one electrode of the transistor element.


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