The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Apr. 24, 2008
Edouard D. Defresart, Tempe, AZ (US);
Robert W. Baird, Gilbert, AZ (US);
Ganming Qin, Chandler, AZ (US);
Edouard D. deFresart, Tempe, AZ (US);
Robert W. Baird, Gilbert, AZ (US);
Ganming Qin, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An embodiment of an MOS device includes a semiconductor substrate of a first conductivity type, a first region of the first conductivity type having a length Land a net active dopant concentration of about N, a pair of spaced-apart body regions of a second opposite conductivity type and each having a length Land a net active dopant concentration of about N, channel regions located in the spaced-apart body regions, source regions of the first conductivity type located in the spaced-apart body regions and separated from the first region by the channel regions, an insulated gate overlying the channel regions and the first region, and a drain region of the first conductivity type located beneath the first region. In an embodiment, (L*N)=k*(L*N), where khas a value in the range of about 0.6≦k≦1.4.