The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2009

Filed:

Oct. 24, 2006
Applicants:

Hee-seog Jeon, Hwaseong-si, KR;

Jeong-uk Han, Suwon-si, KR;

Hyok-ki Kwon, Yongin-si, KR;

Inventors:

Hee-Seog Jeon, Hwaseong-si, KR;

Jeong-Uk Han, Suwon-si, KR;

Hyok-Ki Kwon, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a first transistor and a second transistor formed on a substrate. Each of the first transistor and the second transistor has a first source region, first drain region of a first conductivity type and a gate. The first transistor is an off-transistor and includes a second source/drain region of the first conductivity type which surrounds at least a portion of the first source/drain region in the first transistor.


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