The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Oct. 25, 2006
Jack L. Glenn, Kokomo, IN (US);
Jack L. Glenn, Kokomo, IN (US);
Delphi Technologies, Inc., Troy, MI (US);
Abstract
Electrostatic discharge (ESD) protection is provided for an integrated circuit. Snap back from a lower initial critical voltage and critical current is provided, as compared to contemporary designs. A dynamic region having doped regions is formed on a substrate, interconnects contacting the dynamic region. The dynamic region includes an Nwell region, a Pwell region and shallow diffusions, defining a PNP region, an NPN region and a voltage Breakdown region. In an aspect, the Nwell region includes a first N+ contact, a first P+ contact and an N+ doped enhancement, while the Pwell region includes a second N+ contact, a second P+ contact and a P+ doped enhancement. The N+ doped enhancement contacts the P+ doped enhancement forming the breakdown voltage region therebetween, in one case forming a buried breakdown voltage junction. Independent control is provided over breakdown voltage, NPN critical voltage, NPN critical current and PNP critical current, by varying doping levels, widths and positioning of various doping regions.